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參數(shù)資料
| 型號： | HGTP3N60A4D_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 113K |
| 代理商： | HGTP3N60A4D_NL |
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specied (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
t d(ON)I
,
TURN-ON
DELA
Y
TIME
(ns)
0
12
16
2
1
3456
8
4
TJ = 25
oC, T
J = 125
oC, V
GE = 15V
RG = 50, L = 1mH, VCE = 390V
TJ = 25
oC, T
J = 125
oC, V
GE = 12V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t rI
,
RISE
TIME
(ns)
4
8
20
16
12
24
32
28
3
2
456
1
TJ = 25
oC OR T
J = 125
oC, V
GE = 15V
RG = 50, L = 1mH, VCE = 390V
TJ = 25
oC OR T
J = 125
oC, V
GE = 12V
64
48
56
ICE, COLLECTOR TO EMITTER CURRENT (A)
t d(OFF)I
,TURN-OFF
DELA
Y
TIME
(ns)
112
80
96
72
2
13
4
5
6
88
104
RG = 50, L = 1mH, VCE = 390V
VGE = 12V, TJ = 25
oC
VGE = 15V, TJ = 25
oC
VGE = 15V, TJ = 125
oC
VGE = 12V, TJ = 125
oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
t fI
,F
ALL
TIME
(ns)
48
40
64
80
56
72
88
96
2
13
4
5
6
TJ = 125
oC, V
GE = 12V OR 15V
TJ = 25
oC, V
GE = 12V OR 15V
RG = 50, L = 1mH, VCE = 390V
I CE
,COLLECT
OR
T
O
EMITTER
CURRENT
(A)
0
8
12
46
8
10
14
VGE, GATE TO EMITTER VOLTAGE (V)
12
16
20
4
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, VCE = 10V
TJ = 125
oC
TJ = -55
oC
TJ = 25
oC
V
GE
,GA
TE
T
O
EMITTER
V
O
L
T
A
GE
(V)
QG, GATE CHARGE (nC)
2
14
0
4
10
6
8
12
16
4
8
12
16
24
20
28
0
VCE = 600V
VCE = 400V
VCE = 200V
IG(REF) = 1mA, RL = 100, TJ = 25
oC
HGT1S3N60A4DS, HGTP3N60A4D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| HGTP3N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3D | 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3R4724 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3D | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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