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參數(shù)資料
| 型號： | HGTP3N60A4D_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 113K |
| 代理商： | HGTP3N60A4D_NL |
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specied (Continued)
f MAX
,OPERA
TING
FREQ
UENCY
(kHz)
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
50
300
6
23
600
100
5
4
200
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RJC = 1.8
oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TJ = 125
oC, R
G = 50, L = 1mH, VCE = 390V
TC
VGE
15V
75oC
VGE, GATE TO EMITTER VOLTAGE (V)
I SC
,PEAK
SHOR
T
CIRCUIT
CURRENT
(A)
t SC
,SHOR
T
CIRCUIT
WITHST
AND
TIME
(
s)
10
11
12
15
4
6
14
0
24
40
56
18
13
14
8
10
12
16
8
16
32
48
20
64
VCE = 390V, RG = 50, TJ = 125
oC
tSC
ISC
02
3
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
I CE
,COLLECT
OR
T
O
EMITTER
CURRENT
(A)
0
4
8
45
16
12
20
1
TJ = 25
oC
TJ = 125
oC
TJ = 150
oC
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, VGE = 12V
I CE
,COLLECT
O
R
T
O
EMITTER
CURRENT
(A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
4
8
16
12
20
02
3
4
1
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250
s
TJ = 25
oC
TJ = 150
oC
TJ = 125
oC
E
ON2
,TURN-ON
ENERGY
LOSS
(
J)
160
80
ICE, COLLECTOR TO EMITTER CURRENT (A)
120
40
200
3
24
5
6
0
1
240
TJ = 25
oC, V
GE = 12V, VGE = 15V
TJ = 125
oC, V
GE = 12V, VGE = 15V
RG = 50, L = 1mH, VCE = 390V
120
E
OFF
,TURN-OFF
ENERGY
LOSS
(
J)
0
20
80
40
100
140
60
3
24
5
6
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 25
oC, V
GE = 12V OR 15V
TJ = 125
oC, V
GE = 12V OR 15V
RG = 50, L = 1mH, VCE = 390V
HGT1S3N60A4DS, HGTP3N60A4D
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP3N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3D | 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3R4724 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3D | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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