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參數(shù)資料
| 型號： | HGTP20N60C3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 45A, 600V, UFS Series N-Channel IGBT |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 140K |
| 代理商： | HGTP20N60C3 |
2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
HGTG20N60A4, HGTP20N60A4
600V, SMPS Series N-Channel IGBTs
The HGTG20N60A4 and HGTP20N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
o
C
and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.
This device has been
optimized for high frequency switch mode power
supplies
.
Formerly Developmental Type TA49339.
Symbol
Features
>100kHz Operation at 390V, 20A
200kHz Operation at 390V, 12A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T
J
= 125
o
C
Low Conduction Loss
Temperature Compensating
SABER Model
www.intersil.com
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP20N60A4
TO-220AB
20N60A4
HGTG20N60A4
TO-247
20N60A4
NOTE: When ordering, use the entire part number.
C
E
G
G
C
E
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
C
E
G
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
December 2001
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP20N60B3 | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTP20N60C3 | 45A, 600V, UFS Series N-Channel IGBT |
| HGTP2N120CND | 13A, 1200V, NPT Series N-Channel IGBTs(13A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTP5N120CN | 25A, 1200V, NPT Series N-Channel IGBT(25A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTP7N60B3D | 72 MACROCELL 3.3 VOLT ISP CPLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP20N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP2N120BN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTP2N120BND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP2N120CN | 功能描述:IGBT 晶體管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP2N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
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