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參數(shù)資料
| 型號： | HGTP20N60C3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 45A, 600V, UFS Series N-Channel IGBT |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 140K |
| 代理商： | HGTP20N60C3 |
2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θ
JC
IGBT and Diode at T
J
= 125
o
C
I
CE
= 20A
V
CE
= 390V
V
GE
= 15V
R
G
= 3
L = 500
μ
H
Test Circuit (Figure 20)
-
15
21
ns
Current Rise Time
-
13
18
ns
Current Turn-Off Delay Time
-
105
135
ns
Current Fall Time
-
55
73
ns
Turn-On Energy (Note 3)
-
115
-
μ
J
Turn-On Energy (Note 3)
-
510
600
μ
J
Turn-Off Energy (Note 2)
-
330
500
μ
J
Thermal Resistance Junction To Case
-
-
0.43
o
C/W
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
20
0
80
40
60
25
75
100
125
150
100
V
GE
= 15V
PACKAGE LIMIT
DIE CAPABILITY
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
60
0
I
C
,
20
300
400
200
100
500
600
0
80
100
40
120
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
μ
H
f
M
,
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
300
50
10
20
500
T
J
= 125
o
C, R
G
= 3
, L = 500
μ
H, V
CE
= 390V
100
40
30
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.43
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
75
o
C
V
GE
15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
15
0
2
10
100
250
350
450
14
13
14
4
6
8
12
150
200
300
400
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
t
SC
I
SC
HGTG20N60A4, HGTP20N60A4
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