- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384407 > HGTP20N60C3 (INTERSIL CORP) 45A, 600V, UFS Series N-Channel IGBT PDF資料下載
參數(shù)資料
| 型號： | HGTP20N60C3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 45A, 600V, UFS Series N-Channel IGBT |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 140K |
| 代理商： | HGTP20N60C3 |
2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
80
60
70
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
120
100
110
90
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 3
, L = 500
μ
H, V
CE
= 390V
15
10
20
25
30
35
40
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
16
32
24
48
64
40
56
R
G
= 3
, L = 500
μ
H, V
CE
= 390V
72
80
15
10
20
25
30
35
40
5
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
I
C
,
0
80
120
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
160
200
240
6
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
40
V
G
,
Q
G
, GATE CHARGE (nC)
2
14
0
4
10
I
G(REF)
= 1mA, R
L
= 15
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
6
8
12
16
V
CE
= 600V
20
40
60
80
120
100
140
160
0
I
CE
= 10A
0
0.2
0.4
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
0.6
1.0
125
25
150
1.8
0.8
E
T
,
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 3
, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
1.4
1.2
1.6
I
CE
= 30A
I
CE
= 20A
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
3
1000
E
T
,
10
T
J
= 125
o
C, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 10A
I
CE
= 20A
I
CE
= 30A
HGTG20N60A4, HGTP20N60A4
相關PDF資料 |
PDF描述 |
|---|---|
| HGTP20N60B3 | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTP20N60C3 | 45A, 600V, UFS Series N-Channel IGBT |
| HGTP2N120CND | 13A, 1200V, NPT Series N-Channel IGBTs(13A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTP5N120CN | 25A, 1200V, NPT Series N-Channel IGBT(25A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTP7N60B3D | 72 MACROCELL 3.3 VOLT ISP CPLD |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP20N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP2N120BN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTP2N120BND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP2N120CN | 功能描述:IGBT 晶體管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP2N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
發(fā)布緊急采購，3分鐘左右您將得到回復。