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參數(shù)資料
| 型號： | HGTP1N120CND |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| 中文描述： | 6.2 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 80K |
| 代理商： | HGTP1N120CND |
1
HGTP1N120CND, HGT1S1N120CNDS
6.2A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTP1N120CND and the HGT1S1N120CNDS are
N
on-
P
unch
T
hrough (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
The IGBT is development type number TA49317. The diode
used in anti-parallel with the IGBT is the RHRD4120
(TA49056).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49315.
Symbol
Features
6.2A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical E
OFF
. . . . . . . . . . . . . . . . . . . 200
μ
J at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Temperature Compensating
SABER Model
Thermal Impedance
SPICE Model www.intersil.com/
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP1N120CND
TO-220AB
1N120CND
HGT1S1N120CNDS
TO-263AB
1N120CND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, e.g.
HGT1S1N120CNDS9A.
C
E
G
ECG
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
E
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
Data Sheet
January 2000
File Number
4651.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
SABER is a trademark of Analogy, Inc.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S1N120CNDS | 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| HGTP1N120CN | 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTP20N35G3VL | 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGTP20N35G3VL | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP20N35F3ULR3935 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP20N35F3VL | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP20N35G3VL | 功能描述:IGBT 晶體管 Coil Dri 20A 350V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP20N36G3VL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGTP20N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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