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參數(shù)資料
| 型號： | HGTP1N120CND |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| 中文描述： | 6.2 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 80K |
| 代理商： | HGTP1N120CND |
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
6
6
8
1
3
5
7
1
3
5
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 13V
PULSE DURATION = 250
μ
s
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
2
4
6
8
4
0
5
6
3
2
1
1
3
5
7
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
E
O
,
μ
J
1000
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
800
400
200
2
1
3
1200
0
0.5
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
1
2
3
0.5
100
300
200
400
500
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V OR 15V
T
J
= 25
o
C, V
GE
= 13V OR 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
1
0.5
8
12
20
2
3
16
24
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 13V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
4
8
24
20
12
16
28
1
0.5
2
3
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
HGTP1N120CND, HGT1S1N120CNDS
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PDF描述 |
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| HGT1S1N120CNDS | 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| HGTP1N120CN | 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管) |
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| HGTP20N35F3ULR3935 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP20N35F3VL | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP20N35G3VL | 功能描述:IGBT 晶體管 Coil Dri 20A 350V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP20N36G3VL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGTP20N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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