參數(shù)資料
型號(hào)： HGTP1N120CND
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）)
中文描述： 6.2 A, 1200 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù)： 5/7頁
文件大?。?/td> 80K
代理商： HGTP1N120CND
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1
3
60
2
56
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
80
64
72
0.5
1.5
2.5
68
76
84
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 13V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
0.5
1
3
240
320
400
2
280
440
520
480
360
1.5
2.5
560
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V OR 15V
T
J
= 25
o
C, V
GE
= 13V OR 15V
I
C
,
0
2
4
6
6
9
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
10
12
15
14
16
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250
μ
s
T
C
= 25
o
C
T
C
= -55
o
C
T
C
= 150
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
15
3
6
00
20
8
4
12
9
12
16
I
G(REF)
= 1mA, R
L
= 600
, T
C
= 25
o
C
V
CE
= 1200V
V
CE
= 800V
V
CE
= 400V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
50
C
100
150
250
300
200
350
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
4
0
2
0
4
10
2
6
8
6
8
10
12
V
GE
= 15V
V
GE
= 14V
V
GE
= 13V
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
C
= 110
o
C
HGTP1N120CND, HGT1S1N120CNDS
相關(guān)PDF資料
PDF描述
HGT1S1N120CNDS 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）)
HGTP1N120CN 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管)
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HGTP20N35G3VL 功能描述:IGBT 晶體管 Coil Dri 20A 350V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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HGTP20N60A4 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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