型號: | HGTP12N60C3D_NL |
廠商: | FAIRCHILD SEMICONDUCTOR CORP |
元件分類: | IGBT 晶體管 |
英文描述: | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
中文描述: | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
封裝: | LEAD FREE PACKAGE-3 |
文件頁數(shù): | 6/8頁 |
文件大小: | 154K |
代理商: | HGTP12N60C3D_NL |
相關(guān)PDF資料 |
PDF描述 |
---|---|
HGTP20N60A4_NL | 600V, SMPS Series N-Channel IGBTs |
HGTP2N120CN_NL | 13A, 1200V, NPT Series N-Channel IGBT |
HGTP3N60A4_NL | 600V, NPT Series N-Channel IGBT |
HGTP3N60A4D_NL | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
HGTP7N60A4_NL | 600V SMPS Series N-Channel IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
---|---|
HGTP12N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
HGTP12N60D1 | 制造商:Harris Corporation 功能描述: |
HGTP14N0FVLR4600 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
HGTP14N36G3VL | 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
HGTP14N37G3VL | 功能描述:IGBT 晶體管 14A 370V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |