參數(shù)資料
型號: HGTP12N60C3D_NL
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
中文描述: 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝: LEAD FREE PACKAGE-3
文件頁數(shù): 6/8頁
文件大小: 154K
代理商: HGTP12N60C3D_NL
2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves (Continued)
t1, RECTANGULAR PULSE DURATION (s)
10-5
10-3
100
101
10-4
10-1
10-2
100
Z
θJC
,
N
O
R
M
A
L
IZED
THERM
A
L
RESPO
NSE
10-1
10-2
DUTY FACTOR, D = t1 / t2
PEAK TJ = PD x ZθJC x RθJC + TC
t1
t2
PD
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
0.5
1.0
1.5
2.5
3.0
I EC
,
F
O
R
W
ARD
CURRENT
(
A
)
VEC, FORWARD VOLTAGE (V)
02.0
10
0
20
30
40
50
25oC
100oC
150oC
30
20
10
0
t R
,RECO
VER
Y
TI
M
E
S
(
n
s
)
IEC, FORWARD CURRENT (A)
510
20
015
35
25
15
5
trr
ta
tb
TC = 25
oC, dI
EC/dt = 200A/ms
Test Circuit and Waveform
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
RG = 25
L = 100
H
VDD = 480V
+
-
HGTP12N60C3D
tfi
td(OFF)I
tri
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON
HGTP12N60C3D, HGT1S12N60C3DS
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