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參數(shù)資料
| 型號(hào)： | HGTP12N60C3D_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 154K |
| 代理商： | HGTP12N60C3D_NL |
2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
FIGURE 11. TURN ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
510
15
20
E
ON
,T
URN
ON
E
N
E
R
GY
L
O
S
(m
J
)
VGE = 15V
0.5
1.0
1.5
2.0
25
30
VGE = 10V
TJ = 150
oC, R
G = 25, L = 100H, VCE(PK) = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
E
OF
F
,T
URN
O
F
ENERGY
L
O
SS
(m
J
)
5
10
1520
2530
0.5
1.0
1.5
2.0
2.5
3.0
0
TJ = 150
oC, R
G = 25, L = 100H, VCE(PK) = 480V
VGE = 10V or 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
f MAX
,OPERA
T
IN
G
F
R
EQ
UENCY
(
k
Hz)
510
20
30
10
100
200
1
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
(DUTY FACTOR = 50%)
RθJC = 1.2
oC/W
TJ = 150
oC, T
C = 75
oC
RG = 25, L = 100H
VGE = 15V
VGE = 10V
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
I CE
,
COL
L
ECT
O
R
T
O
E
M
IT
T
E
R
CURR
E
N
T
(
A
)
0
100
200
300
400
500
600
0
20
40
60
80
100
TJ = 150
oC, V
GE = 15V, RG = 25, L = 100H
LIMITED BY
CIRCUIT
COES
CRES
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
500
1000
1500
2000
2500
C,
CAP
A
C
IT
ANCE
(
p
F
)
FREQUENCY = 1MHz
CIES
V
GE
,GA
T
E
T
O
E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
Qg, GATE CHARGE (nC)
15
12
9
6
3
0
10
20
30
40
50
60
0
VCE = 200V
VCE = 400V
VCE = 600V
IG REF = 1.276mA, RL = 50, TC = 25
oC
HGTP12N60C3D, HGT1S12N60C3DS
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