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參數(shù)資料
| 型號： | HGTP12N60C3D_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 154K |
| 代理商： | HGTP12N60C3D_NL |
2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
FIGURE 7. TURN ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves (Continued)
25
50
75
100
125
150
0
5
10
15
20
25
I CE
,DC
COL
L
ECT
O
R
CURRENT
(
A
)
TC, CASE TEMPERATURE (
oC)
VGE = 15V
I SC
,PEAK
SHO
R
T
CIRC
UIT
CURRENT
(
A
)
20
60
80
120
t SC
,
S
H
O
R
T
CI
RCUIT
WIT
H
S
T
AND
T
IM
E
(
s)
10
11
12
VGE, GATE TO EMITTER VOLTAGE (V)
14
15
13
140
100
40
ISC
5
10
15
20
VCE = 360V, RG = 25, TJ = 125
oC
tSC
t d(
O
N
)I
,T
URN
ON
DE
L
A
Y
T
IM
E
(
n
s
)
10
20
30
510
15
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
100
25
30
50
VGE = 10V
VGE = 15V
TJ = 150
oC, R
G = 25, L = 100H, VCE(PK) = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t d(
O
FF)
I,
T
URN
OF
F
DEL
A
Y
T
IM
E
(
n
s
)
400
300
200
100
5
1015
2025
30
TJ = 150
oC, R
G = 25, L = 100H, VCE(PK) = 480V
VGE = 10V
VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t ri
,
T
URN
ON
RISE
T
IM
E
(n
s
)
5
10
100
5
1015
2025
30
VGE = 15V
VGE = 10V
200
TJ = 150
oC, R
G = 25, L = 100H, VCE(PK) = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t fi
,
F
A
L
TI
M
E
(n
s)
100
5
101520
2530
200
300
TJ = 150
oC, R
G = 25, L = 100H, VCE(PK) = 480V
VGE = 10V OR 15V
90
80
HGTP12N60C3D, HGT1S12N60C3DS
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