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參數(shù)資料
| 型號(hào)： | HGTP12N60C3_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 24A,600V, UFS Series N-Channel IGBTs |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 172K |
| 代理商： | HGTP12N60C3_NL |
2001 Fairchild Semiconductor Corporation
HGTP12N60C3, HGT1S12N60C3S Rev. B
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I CE
,COL
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(A
)
VGE, GATE TO EMITTER VOLTAGE (V)
46
8
10
12
0
10
20
40
50
60
70
14
30
80
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, VCE = 10V
TC = 25
oC
TC = 150
oC
TC = -40
oC
I CE
,C
O
LLE
C
T
O
R
T
O
EMI
TTE
R
C
U
R
E
N
T
(A
)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
s, DUTY CYCLE <0.5%, TC = 25oC
0
024
68
10
20
30
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
VGE = 15.0V
40
50
60
70
80
10.0V
I CE
,CO
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(
A
)
0
30
0
123
4
5
40
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, VGE = 10V
TC = 150
oC
TC = 25
oC
TC = -40
oC
10
20
50
70
80
60
I CE
,COL
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(A
)
0
30
01
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TC = 25
oC
TC = -40
oC
TC = 150
oC
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250
s
10
20
40
50
60
70
80
25
50
75
100
125
150
0
5
10
15
20
25
I CE
,DC
COL
L
ECT
O
R
CURRENT
(
A
)
TC, CASE TEMPERATURE (
oC)
VGE = 15V
I SC
,PEAK
SHOR
T
CIRCUIT
CURRENT
(A
)
20
60
80
120
t SC
,SHOR
T
CIRCUIT
WIT
H
ST
AND
T
IM
E
(
s)
10
11
12
VGE, GATE TO EMITTER VOLTAGE (V)
14
15
13
140
100
40
ISC
tSC
5
10
15
20
VCE = 360V, RG = 25, TJ = 125
oC
HGTP12N60C3, HGT1S12N60C3S
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