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參數(shù)資料
| 型號(hào)： | HGTP12N60A4D_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | HGTP12N60A4D_NL |
2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves Unless Otherwise Specified (Continued)
48
2
95
6
85
90
ICE, COLLECTOR TO EMITTER CURRENT (A)
t d(
O
FF)
I,
T
URN-
OF
F
DEL
A
Y
T
IM
E
(n
s
)
12
115
16
14
105
110
10
100
VGE = 12V, VGE = 15V, TJ = 25
oC
VGE = 12V, VGE = 15V, TJ = 125
oC
RG = 10, L = 500H, VCE = 390V
18
20
22
24
ICE, COLLECTOR TO EMITTER CURRENT (A)
t fI
,F
A
LL
TI
ME
(n
s
)
10
30
20
50
70
40
60
RG = 10, L = 500H, VCE = 390V
TJ = 25
oC, V
GE = 12V OR 15V
TJ = 125
oC, V
GE = 12V OR 15V
48
2
6
12
16
14
10
18
20
22
24
80
90
I CE
,COL
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(
A
)
0
50
100
13
78
9
10
12
VGE, GATE TO EMITTER VOLTAGE (V)
11
150
200
14
15
250
6
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, VCE = 10V
16
TJ = 125
oC
TJ = -55
oC
TJ = 25
oC
V
GE
,
GA
T
E
T
O
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
QG, GATE CHARGE (nC)
2
14
0
020
10
30
4
10
40
IG(REF) = 1mA, RL = 25, TC = 25
oC
VCE = 200V
VCE = 400V
50
60
70
80
6
8
12
16
VCE = 600V
ICE = 24A
ICE = 12A
ICE = 6A
0
0.2
0.4
50
75
100
TC, CASE TEMPERATURE (
oC)
0.6
1.0
125
25
150
1.2
0.8
E
TO
T
A
L
,T
O
T
A
L
SWIT
CHING
RG = 10, L = 500H, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ENE
R
G
Y
L
O
SS
(m
J
)
0.1
10
100
RG, GATE RESISTANCE ()
1
51000
ICE = 12A
ICE = 24A
ICE = 6A
10
TJ = 125
oC, L = 500H,
ETOTAL = EON2 + EOFF
E
TO
T
A
L
,T
O
T
A
L
SWIT
CHING
ENE
R
G
Y
L
O
SS
(m
J
)
VCE = 390V, VGE = 15V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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| HGTP12N60C3 | 功能描述:IGBT 晶體管 24a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP12N60C3D | 功能描述:IGBT 晶體管 HGTP12N60C3D RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP12N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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