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參數(shù)資料
| 型號： | HGTP12N60A4D_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | HGTP12N60A4D_NL |
2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
600
V
Collector Current Continuous
At TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
54
A
At TC = 110
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
23
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
96
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150
oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
60A at 600V
Power Dissipation Total at TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
167
W
Power Dissipation Derating TC > 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.33
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250A, VGE = 0V
600
-
V
Collector to Emitter Leakage Current
ICES
VCE = 600V
TJ = 25
oC
-
250
A
TJ = 125
oC-
-
2.0
mA
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 12A,
VGE = 15V
TJ = 25
oC-
2.0
2.7
V
TJ = 125
oC-
1.6
2.0
V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250A, VCE = 600V
-
5.6
-
V
Gate to Emitter Leakage Current
IGES
VGE = ±20V
-
±250
nA
Switching SOA
SSOA
TJ = 150
oC, R
G = 10, VGE = 15V,
L = 100
H, VCE = 600V
60
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = 12A, VCE = 300V
-
8
-
V
On-State Gate Charge
Qg(ON)
IC = 12A,
VCE = 300V
VGE = 15V
-
78
96
nC
VGE = 20V
-
97
120
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25
oC,
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10,
L = 500
H,
Test Circuit (Figure 24)
-17
-
ns
Current Rise Time
trI
-8
-
ns
Current Turn-Off Delay Time
td(OFF)I
-96
-
ns
Current Fall Time
tfI
-18
-
ns
Turn-On Energy (Note 3)
EON1
-55
-
J
Turn-On Energy (Note 3)
EON2
-
160
-
J
Turn-Off Energy (Note 2)
EOFF
-50
-
J
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 125
oC,
ICE = 12A,
VCE = 390V, VGE = 15V,
RG = 10,
L = 500
H,
Test Circuit (Figure 24)
-17
-
ns
Current Rise Time
trI
-16
-
ns
Current Turn-Off Delay Time
td(OFF)I
-
110
170
ns
Current Fall Time
tfI
-70
95
ns
Turn-On Energy (Note3)
EON1
-55
-
J
Turn-On Energy (Note 3)
EON2
-
250
350
J
Turn-Off Energy (Note 2)
EOFF
-
175
285
J
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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| HGTP12N60C3 | 功能描述:IGBT 晶體管 24a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP12N60C3D | 功能描述:IGBT 晶體管 HGTP12N60C3D RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP12N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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