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參數資料
| 型號： | HGTP12N60A4D_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | HGTP12N60A4D_NL |
2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
Diode Forward Voltage
VEC
IEC = 12A
-
2.2
-
V
Diode Reverse Recovery Time
trr
IEC = 12A, dIEC/dt = 200A/s-
30
-
ns
IEC = 1A, dIEC/dt = 200A/s-
18
-
ns
Thermal Resistance Junction To Case
RθJC
IGBT
-
0.75
oC/W
Diode
-
2.0
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
TJ = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
TC, CASE TEMPERATURE (
oC)
I CE
,DC
CO
L
ECT
O
R
CU
RRE
N
T
(
A
)
50
10
0
40
20
30
25
75
100
125
150
60
50
VGE = 15V,
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
40
0
I CE
,
COL
L
ECT
O
R
T
O
E
M
IT
T
E
R
CU
RRE
N
T
(
A
)
10
20
300
400
200
100
500
600
0
50
60
30
70
TJ = 150
oC, R
G = 10, VGE = 15V, L = 200H
TC
VGE
15V
75oC
f MAX
,OPERA
T
IN
G
F
R
EQ
UENCY
(
k
Hz)
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
3
300
30
10
20
500
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RJC = 0.75
oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TJ = 125
oC, R
G = 10, L = 500H, V CE = 390V
100
VGE, GATE TO EMITTER VOLTAGE (V)
I SC
,PEAK
SHO
R
T
CI
RCUIT
CURRENT
(A
)
t SC
,SHOR
T
CIRCUI
T
WI
T
H
ST
AND
T
IM
E
(
s)
9
101112
15
0
2
10
16
50
125
175
300
tSC
ISC
20
250
13
14
4
6
8
12
14
18
75
100
150
200
225
275
VCE = 390V, RG = 10, TJ = 125
oC
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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| HGTP12N60B3D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| HGTP12N60C3 | 功能描述:IGBT 晶體管 24a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP12N60C3D | 功能描述:IGBT 晶體管 HGTP12N60C3D RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP12N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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