參數(shù)資料
型號： HGTG40N60B3_NL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, UFS Series N-Channel IGBT
中文描述： 70 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 5/8頁
文件大?。?/td> 138K
代理商： HGTG40N60B3_NL
2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves (Unless Otherwise Specified) (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
t d(
O
FF)
I,
TU
R
N
-O
F
D
E
LA
Y
TI
ME
(n
s)
40
60
80
100
150
200
250
300
RG = 3, L = 100H, VCE = 480V
TJ = 25
oC, V
GE = 15V
TJ = 25
oC, V
GE = 15V
TJ = 150
oC, V
GE = 10V
TJ = 150
oC, V
GE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t fI
,F
A
L
T
IME
(n
s
)
20
40
60
80
100
20
60
100
140
180
RG = 3, L = 100H, VCE = 480V
TJ = 150
oC, V
GE = 10V AND 15V
TJ = 25
oC, V
GE = 10V AND 15V
I CE
,COL
L
E
C
T
OR
T
O
EM
IT
T
E
R
CURRENT
(
A
)
0
40
80
120
160
200
57
8
9
10
46
VGE, GATE TO EMITTER VOLTAGE (V)
TC = 150
oC
TC = -55
oC
TC = 25
oC
DUTY CYCLE = <0.5%, VCE = 10V
PULSE DURATION = 25
s
QG, GATE CHARGE (nC)
200
0
12
15
9
6
3
0100
50
150
250
300
Ig(REF) = 3.255mA, RL = 7.5, TC = 25
oC
VCE = 600V
VCE = 200V
VCE = 400V
V
GE
,GA
T
E
T
O
E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
CRES
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
2
C,
CAP
A
C
IT
ANCE
(n
F
)
CIES
COES
FREQUENCY = 400kHz
4
6
8
10
12
14
HGTG40N60B3
相關(guān)PDF資料
PDF描述
HGTG5N120BND_NL 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
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HGTP12N60A4D_NL 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG40N60B3R4729 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTG40N60C3 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG40N60C3_R4752 制造商:Fairchild Semiconductor Corporation 功能描述:- Rail/Tube
HGTG40N60C3R 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTG5N120BND 功能描述:IGBT 晶體管 21a 1200V IGBT NPT Series N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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