參數(shù)資料
型號(hào)： HGTG40N60B3_NL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： IGBT 晶體管
英文描述： 600V, UFS Series N-Channel IGBT
中文描述： 70 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 138K
代理商： HGTG40N60B3_NL
2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
Current Turn-On Delay Time
td(ON)I
IGBT and Diode Both at TJ = 150
oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3
L = 100
H
Test Circuit (Figure 17)
-47
-
ns
Current Rise Time
trI
-35
-
ns
Current Turn-Off Delay Time
td(OFF)I
-
285
375
ns
Current Fall Time
tfI
-
100
175
ns
Turn-On Energy
EON
-
1850
-
J
Turn-Off Energy (Note 1)
EOFF
-
2000
-
J
Thermal Resistance Junction To Case
RθJC
-
0.43
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves (Unless Otherwise Specified)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
TC, CASE TEMPERATURE (
oC)
I CE
,DC
CO
L
ECT
O
R
C
URRENT
(
A
)
25
50
75
100
125
150
20
0
40
60
80
100
PACKAGE LIMITED
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
250
700
150
0
I CE
,COL
L
E
CT
OR
T
O
EM
IT
T
E
R
CURRENT
(A
)
50
100
300
400
200
100
500
600
200
0
TJ = 150
oC, R
G = 3, VGE = 15V
f MAX
,OP
E
R
A
T
ING
F
R
E
Q
UE
NC
Y
(kHz
)
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
20
40
60
100
1
100
TC
VGE
110oC
10V
110oC15V
10V
75oC
15V
75oC
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RJC = 0.43
oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON + EOFF)
TJ = 150
oC, R
G = 3, L = 100H, V CE = 480V
80
VGE, GATE TO EMITTER VOLTAGE (V)
I SC
,PEAK
SHOR
T
CIRCUIT
CURRENT
(
A
)
t SC
,
S
H
O
R
T
CI
RCUIT
WIT
H
S
T
AND
T
IM
E
(
s)
10
11
12
13
14
15
4
6
8
10
14
16
12
18
200
300
400
500
600
700
800
900
tSC
ISC
VCE = 360V, RG = 3, TJ = 125
oC
HGTG40N60B3
相關(guān)PDF資料
PDF描述
HGTG5N120BND_NL 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120BND_NL 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP12N60A4D_NL 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG40N60B3R4729 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTG40N60C3 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG40N60C3_R4752 制造商:Fairchild Semiconductor Corporation 功能描述:- Rail/Tube
HGTG40N60C3R 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTG5N120BND 功能描述:IGBT 晶體管 21a 1200V IGBT NPT Series N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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