參數(shù)資料
型號(hào)： HGTG40N60B3_NL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, UFS Series N-Channel IGBT
中文描述： 70 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 138K
代理商： HGTG40N60B3_NL
2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves (Unless Otherwise Specified) (Continued)
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, VGE = 10V
TC = -55
oC
TC = 150
oC
TC = 25
oC
01
23
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
I CE
,CO
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(
A
)
0
50
100
150
200
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250
s
TC = 150
oC
TC = -55
oC
TC = 25
oC
01
2
3
4
I CE
,CO
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(
A
)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
50
100
150
200
E
ON
,T
URN-
ON
ENE
R
GY
L
O
SS
(m
J
)
20
12
ICE, COLLECTOR TO EMITTER CURRENT (A)
100
16
8
4
0
80
60
40
20
RG = 3, L = 100H, VCE = 480V
TJ = 150
oC, V
GE = 15V
TJ = 25
oC, V
GE = 15V
TJ = 150
oC, V
GE = 10V
TJ = 25
oC, V
GE = 10V
ICE, COLLECTOR TO EMITTER CURRENT (A)
E
OF
F
,T
URN-
OF
F
E
N
ERG
Y
L
O
S
(
m
J
)
100
2
4
6
8
0
80
60
40
20
RG = 3, L = 100H, VCE = 480V
TJ = 150
oC; V
GE = 10V AND 15V
TJ = 25
oC; V
GE = 10V AND 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t dI
,
T
URN-
O
N
DEL
A
Y
T
IM
E
(n
s
)
30
40
20
60
80
100
40
50
60
70
80
90
RG = 3, L = 100H, VCE = 480V
TJ = 25
oC, V
GE = 10V
TJ = 150
oC, V
GE = 10V
TJ = 150
oC, V
GE = 15V
TJ = 25
oC, V
GE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t rI
,R
IS
E
T
IM
E
(n
s
)
20
100
300
200
400
500
0
600
40
60
80
100
TJ = 25
oC, V
GE = 10V
TJ = 25
oC AND 150oC,
VGE = 10V AND 15V
RG = 3, L = 100H, VCE = 480V
TJ = 150
oC, V
GE = 10V
HGTG40N60B3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG40N60B3R4729 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTG40N60C3 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG40N60C3_R4752 制造商:Fairchild Semiconductor Corporation 功能描述:- Rail/Tube
HGTG40N60C3R 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTG5N120BND 功能描述:IGBT 晶體管 21a 1200V IGBT NPT Series N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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