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參數(shù)資料
| 型號(hào)： | HGTD8P50G1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Mechanism, 2-inch w/front paper feed and partial cutter |
| 中文描述： | 12 A, 500 V, P-CHANNEL IGBT, TO-251AA |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 110K |
| 代理商： | HGTD8P50G1 |
2
Specifications HGTD8P50G1, HGTD8P50G1S
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
BV
CES
I
CE
= -250
μ
A
V
CL
= -600V
V
GE
= 0V
-500
-
-
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
EC
= 1mA
V
GE
= 0V
10
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
-250
μ
A
V
CE
= 0.8 BV
CES
T
C
= +150
o
C
-
-
-1.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
CE
= -3.0A
V
GE
= -15V
T
C
= +25
o
C
-
-2.5
-2.9
V
T
C
= +150
o
C
-
-2.3
-2.8
V
I
CE
= I
C90
V
GE
= -15V
T
C
= +25
o
C
-
-3.0
-3.7
V
T
C
= +150
o
C
-
-3.3
-4.0
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
CE
= -1.0mA
V
CE
= V
GE
-4.5
-6.0
-7.5
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
100
nA
Gate-Emitter Plateau Voltage
V
GE(PL)
I
C
= 3A
V
CE
= 0.5 BV
CES
-
-7.0
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 3A,
V
CE
= 0.5 BV
CES
V
GE
= -15V
-
16
25
nC
V
GE
= -20V
-
22
30
nC
Current Turn-On Delay Time
t
D(ON)I
R
L
= 113
I
CE
= -3A,
V
GE
= -15V
V
CE
= -350V
R
G
= 25
T
J
= +150
o
C
Fig. 17, Circuit 1
-
45
-
ns
Current Rise Time
t
RI
-
85
-
ns
Current Turn-off Delay Time
t
D(OFF)I
L = 100
μ
H
-
480
680
ns
Current Fall Time
t
FI
-
1800
2500
ns
Turn-Off Energy (Note 1)
E
OFF
-
0.8
-
mJ
Current Turn-Off Delay Time
t
D(OFF)I
L = 100
μ
H
I
CE
= -8A,
V
GE
= -15V
V
CE
= -350V
R
G
= 25
T
J
= +150
o
C
Fig. 17, Circuit 2
C
1
= .022
μ
F
-
100
200
ns
Current Fall Time
t
FI
-
3500
4000
ns
Turn-Off Energy (Note 1)
E
OFF
-
1.3
-
mJ
Latching Current
I
L
L = 100
μ
H
V
GE
= -15V
R
G
= 25
T
J
= +25
o
C
V
CE
= -350V
Fig. 17, Circuit 1
-3
-
-
A
Thermal Resistance
R
θ
JC
-
1.75
1.90
o
C/W
NOTE:
1. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTD8P50G1 and HGTD8P50G1S were tested per JEDEC
standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off
Energy Loss. Turn-On losses include diode losses.
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