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參數(shù)資料
| 型號(hào)： | HGTD8P50G1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Mechanism, 2-inch w/front paper feed and partial cutter |
| 中文描述： | 12 A, 500 V, P-CHANNEL IGBT, TO-251AA |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | HGTD8P50G1 |
1
HGTD8P50G1,
HGTD8P50G1S
8A, 500V P-Channel IGBTs
Package
JEDEC TO-251AA
JEDEC TO-252AA
Symbol
(FLANGE)
COLLECTOR
EMITTER
COLLECTOR
GATE
(FLANGE)
COLLECTOR
GATE
EMITTER
C
G
E
Features
8A, 500V
3.7V V
CE(SAT)
Typical Fall Time - 1800ns
High Input Impedance
T
J
= +150
o
C
Description
The HGTD8P50G1 and the HGTD8P50G1S are P-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high voltage, low on-dissipation applications such
as switching regulators and motor drives. This P- channel IGBT
can be paired with N-Channel IGBTs to form a complementary
power switch and it is ideal for half bridge circuit configurations.
These types can be operated directly from low power integrated
circuits.
The development type number for these devices is TA49015.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD8P50G1
TO-251AA
G8P50G
HGTD8P50G1S
TO-252AA
G8P50G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
HGTD8P50G1S9A.
March 1997
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTD8P50G1/G1S
-500
10
UNITS
V
V
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous
At T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= +90
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching SOA at T
C
= +25
o
C, V
CL
= -350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
No Snubber, Figure 17 - Circuit 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With 0.1
μ
F Capacitor, Figure 17 - Circuit 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
(0.125" from case for 5s)
NOTE:
1. T
J
= 25
o
C, V
CL
= 350V, R
GE
= 25
,
Figure 17 - Circuit 2 (C
1
= 0.1
μ
F)
-12
-8
-18
±
20
±
30
A
A
A
V
V
-3
-18
66
0.53
A
A
W
W/
o
C
o
C
o
C
-40 to +150
+260
File Number
3649.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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