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參數(shù)資料
| 型號： | HGTD3N60C3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 243K |
| 代理商： | HGTD3N60C3S |
4
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d
,
3
1
2
3
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
5
6
10
V
GE
= 15V
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
500
400
300
200
V
GE
= 10V
V
GE
= 15V
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
5
10
80
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
V
GE
= 10V OR 15V
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
300
200
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
E
O
,
0.1
0.2
0.3
0.4
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.5
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0.1
0.2
0.3
0.4
0.5
0.6
0
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.8
0.7
V
GE
= 10V or 15V
HGTD3N60C3S, HGTP3N60C3
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| HGTD3N60C3S9A | 功能描述:IGBT 晶體管 6a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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