- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371809 > HGTD3N60C3S9A (FAIRCHILD SEMICONDUCTOR CORP) 6A, 600V, UFS Series N-Channel IGBTs PDF資料下載
參數(shù)資料
| 型號(hào)： | HGTD3N60C3S9A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 243K |
| 代理商： | HGTD3N60C3S9A |
5
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
1
2
4
6
100
200
10
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 3.75
o
C/W
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 82
, L = 1mH
V
GE
= 10V
V
GE
= 15V
5
3
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
2
4
6
8
T
J
= 150
o
C, V
GE
= 15V, R
G
= 82
, L = 1mH
10
12
14
16
18
20
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
100
200
300
400
500
C
C
IES
FREQUENCY = 1MHz
C
OES
C
RES
V
G
,
V
C
,
Q
g
, GATE CHARGE (nC)
0
240
120
360
480
600
15
12
9
6
3
0
V
CE
= 400V
V
CE
= 200V
2
4
6
8
10
12
14
V
CE
= 600V
0
I
G
REF = 1.060mA,
R
L
= 200
, T
C
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.05
0.2
0.1
0.02
0.01
HGTD3N60C3S, HGTP3N60C3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTD3N60C3S | 6A, 600V, UFS Series N-Channel IGBTs |
| HGTD8P50G1S | 8A, 500V P-Channel IGBTs |
| HGTD8P50G1 | Mechanism, 2-inch w/front paper feed and partial cutter |
| HGTG18N120BN | CAT6A RISER, YELLOW, SPOOBULK CABLE |
| HGTG18N120BND | CAT6A PVC GRAY F/UTP BULK CABLE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD6N40E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD6N40E1S | 制造商:Harris Corporation 功能描述: |
| HGTD6N50E1 | 制造商:Harris Corporation 功能描述: |
| HGTD6N50E1S | 制造商:Rochester Electronics LLC 功能描述: |
| HGTD7N60A4S | 功能描述:IGBT 晶體管 TO-252 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。