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參數(shù)資料
| 型號(hào)： | HGTD3N60C3S9A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 243K |
| 代理商： | HGTD3N60C3S9A |
3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
8
10
12
0
2
4
8
10
12
14
14
6
16
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
18
20
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
2
4
6
8
10
12V
V
GE
= 15V
0
2
4
8
10
12
14
6
16
18
20
10V
8.0V
7.5V
7.0V
9.0V
8.5V
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= -40
o
C
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
T
C
= -40
o
C
25
50
75
100
125
150
0
1
2
3
4
5
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
7
6
I
S
,
0
20
30
50
t
S
,
μ
S
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
60
40
10
I
SC
t
SC
0
4
10
14
V
CE
= 360V, R
G
= 82
, T
J
= 125
o
C
2
6
8
12
70
HGTD3N60C3S, HGTP3N60C3
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