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參數(shù)資料
| 型號(hào)： | HGTD1N120BNS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.3A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | HGTD1N120BNS |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Unless Otherwise Specified)
(Continued)
f
M
,
0.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
10
2.0
1.0
100
3.0
200
300
T
C
V
GE
15V
110
o
C 13V
15V
75
o
75
o
C
110
o
C
T
J
= 150
o
C, R
G
= 82
, L = 4mH, V
CE
= 960V
T
C
= 75
o
C, VGE = 15V
IDEAL DIODE
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 2.1
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
13
14
14.5
15
10
12
16
20
18
13.5
14
10
12
16
20
18
14
V
CE
= 840V, R
G
= 82
, T
J
= 125
o
C
t
SC
I
SC
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
6
6
8
10
1
3
5
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 13V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -55
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2
3
4
0
2
4
6
8
10
1
6
0
5
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
E
O
,
1000
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
800
400
200
1.5
1
2
0.5
1200
2.5
0
3
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 13V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
1
1.5
2
0.5
50
150
100
200
250
2.5
3
T
J
= 150
o
C, V
GE
= 13V OR 15V
T
J
= 25
o
C, V
GE
= 13V OR 15V
R
G
= 82
, L = 4mH, V
CE
= 960V
HGTD1N120BNS, HGTP1N120BN
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HGTD1N120BNS9A | 功能描述:IGBT 晶體管 5.3a 1200v N-Ch IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD1N120CNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA |
| HGTD2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
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