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參數(shù)資料
| 型號(hào)： | HGTD1N120BNS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.3A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 71K |
| 代理商： | HGTD1N120BNS |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 1.0A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 4mH
Test Circuit (Figure 18)
-
15
20
ns
Current Rise Time
t
rI
-
11
14
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
67
76
ns
Current Fall Time
t
fI
-
226
300
ns
Turn-On Energy (Note 5)
E
ON1
-
70
-
J
Turn-On Energy (Note 5)
E
ON2
-
172
187
J
Turn-Off Energy (Note 4)
E
OFF
-
90
123
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 1.0 A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 4mH
Test Circuit (Figure 18)
-
13
17
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
75
88
ns
Current Fall Time
t
fI
-
258
370
ns
Turn-On Energy (Note 5)
E
ON1
-
145
-
J
Turn-On Energy (Note 5)
E
ON2
-
385
440
J
Turn-Off Energy (Note 4)
E
OFF
-
120
175
J
Thermal Resistance Junction To Case
R
θ
JC
-
-
2.1
o
C/W
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
Typical Performance Curves
(Unless Otherwise Specified)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
4
5
1
25
75
100
125
150
3
2
6
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
3
0
I
C
,
1
2
600
800
400
200
1000
1200
0
4
6
5
7
T
J
= 150
o
C, R
G
= 82
, V
GE
= 15V, L = 2mH
HGTD1N120BNS, HGTP1N120BN
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| HGTD1N120BNS9A | 功能描述:IGBT 晶體管 5.3a 1200v N-Ch IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD1N120CNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA |
| HGTD2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
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