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649
5. Number of times when the wait time after P bit setting (z) = 200
μ
s.
The maximum number of writes (N) should be set according to the actual set value of z
so as not to exceed the maximum programming time (t
P
(max)).
6. For the maximum erase time (t
(max)), the following relationship applies between the
wait time after E bit setting (z) and the maximum number of erases (N):
t
(max) = Wait time after E bit setting (z)
×
maximum number of erases (N)
The values of z and N should be set so as to satisfy the above formula.
Examples: When z = 5 [ms], N = 240 times
When z = 10 [ms], N = 120 times
Table 20.10 Flash Memory Characteristics (2)
—In planning stage—
Conditions: V
CC
= AV
CC
= 3.0 to 3.6 V, V
SS
= AV
SS
= 0 V,
T
a
= 0 to +75
°
C (flash memory programming/erase operating temperature range)
Item
Symbol
Min
Typ
Max
Unit
Test
Conditions
Programming time
*
1,
*
2,
*
4
t
P
—
TBD
TBD
ms/
32 bytes
Erase time
*
1,
*
3,
*
5
t
E
—
TBD
TBD
ms/block
Number of programmings
N
WEC
—
—
TBD
Times
Programming Wait time after setting SWE bit
*
1
x
TBD
—
—
μ
s
Wait time after setting PSU bit
*
1
y
TBD
—
—
μ
s
Wait time after setting P bit
*
1,
*
4
z
—
—
TBD
μ
s
Wait time after clearing P bit
*
1
α
TBD
—
—
μ
s
Wait time after clearing PSU bit
*
1
β
TBD
—
—
μ
s
Wait time after setting PV bit
*
1
γ
TBD
—
—
μ
s
Wait time after H'FF dummy write
*
1
ε
TBD
—
—
μ
s
Wait time after clearing PV bit
*
1
η
TBD
—
—
μ
s
Max. number of programmings
*
1,
*
4
N
—
—
TBD
Times
Erase
Wait time after setting SWE bit
*
1
x
TBD
—
—
μ
s
Wait time after setting ESU bit
*
1
y
TBD
—
—
μ
s
Wait time after setting E bit
*
1,
*
5
z
—
—
TBD
μ
s
Wait time after clearing E bit
*
1
α
TBD
—
—
μ
s
Wait time after clearing ESU bit
*
1
β
TBD
—
—
μ
s
Wait time after setting EV bit
*
1
γ
TBD
—
μ
s
Wait time after H'FF dummy write
*
1
ε
TBD
—
—
μ
s
Wait time after clearing EV bit
*
1
η
TBD
—
—
μ
s
Max. number of erases
*
1,
*
5
N
—
—
TBD
Times
Notes: 1. Time settings should be made in accordance with the programming/erase algorithm.
2. Programming time per 32 bytes. (Indicates the total time the P bit in the flash memory
control register (FLMCR1) is set. The program verification time is not included.)
3. Time to erase one block. (Indicates the total time the E bit in FLMCR1 is set. The erase