參數(shù)資料
型號: HAT2029R
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET(N溝道功率MOSFET)
中文描述: 硅?通道功率場效應(yīng)晶體管(不適用溝道功率MOSFET的)
文件頁數(shù): 5/9頁
文件大?。?/td> 127K
代理商: HAT2029R
HAT2029R
5
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
0.2
0.5
1
2
5
10
500
200
100
20
50
10
5
0.1
0
10
20
30
40
50
10000
3000
1000
300
100
30
10
V = 0
f = 1 MHz
50
40
30
20
10
0
10
8
6
4
2
4
8
12
16
20
0
di/dt = 20 A/μs
V = 0, Ta = 25°C
Ciss
Coss
Crss
V
GS
V
DS
V = 5 V
10 V
20 V
V = 20 V
10 V
5 V
I = 7.5 A
Drain Current I (A)
S
Switching Characteristics
0.2
0.5
1
2
5
10
500
200
100
20
50
10
5
0.1
tf
r
d(on)
t
d(off)
t
V = 4 V, V = 10 V
PW = 3 μs, duty < 1 %
相關(guān)PDF資料
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HAT2029 Silicon N Channel Power MOS FET High Speed Power Switching
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HAT2033RJ Silicon N Channel Power MOS FET(N溝道功率MOSFET)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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