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參數(shù)資料
| 型號(hào)： | HAT2029R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| 中文描述： | 硅?通道功率場(chǎng)效應(yīng)晶體管（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 127K |
| 代理商： | HAT2029R |
HAT2029R
2
Absolute Maximum Ratings (Ta = 25
°
C)
Note:
1.PW
≤
10
μ
s, duty cycle
≤
1 %
2.1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Electrical Characteristics (Ta = 25
°
C)
Note:
4.Pulse test
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current I
DR
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Ratings
28
±
12
7.5
60
7.5
2
3
150
– 55 to + 150
Unit
V
V
A
A
A
W
W
°
C
°
C
Pch
Note2
Pch
Note3
Tch
Tstg
Item
Drain to source breakdown voltage V
(BR)DS
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
S
28
Gate to source breakdown voltage V
(BR)GS
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
±
12
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
—
—
0.4
—
—
9.5
—
—
—
—
—
—
—
—
—
—
—
—
0.025
0.031
15
780
470
190
20
170
140
170
0.88
65
±
10
1
1.4
0.033
0.043
—
—
—
—
—
—
—
—
1.15
—
μ
A
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
V
GS
=
±
10 V, V
DS
= 0
V
DS
= 28 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 4 A, V
GS
= 4 V
Note4
I
D
= 4 A, V
GS
= 2.5 V
Note4
I
D
= 4 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1MHz
V
GS
= 4 V, I
D
= 4 A
V
DD
@ 10 V
IF = 7.5 A, V
GS
= 0
Note4
IF = 7.5 A, V
GS
= 0
diF/ dt = 20 A/
μ
s
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