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參數(shù)資料
| 型號： | H5N2008P |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 117K |
| 代理商： | H5N2008P |
H5N2008P
Rev.3.00 Nov.24.2004 page 5 of 6
0
0.4
0.8
1.2
1.6
2.0
100
40
V
GS
= 0 V
10 V
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
R
D
Pulse Test
5
4
3
2
1
-25
0
50
100
150
25
125
75
0
Case Temperature Tc (
°
C)
Gate to Source Cutoff Voltage
vs. Case Temperature
G
G
V
DS
= 10 V
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 100 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
10
90%
10%
t
f
Switching Time Test Circuit
Waveform
5 V
I
D
= 10 mA
1 mA
0.1 mA
20
60
80
3
1
0.3
0.1
0.03
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
DM
P
PW
T
D =T
ch – c(t) = s (t) ch – c
ch – c = 0.833
°
C/W, Tc = 25
°
C
θ
θ
Tc = 25
°
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1sho puse
Pulse Width PW (s)
N
γ
Normalized Transient Thermal Impedance vs. Pulse Width
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2008P-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P Magazine |
| H5N2301PF-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H5N2305P-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H5N2305PF | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET High Speed Power Switching |
| H5N2305PF-E | 制造商:Renesas Electronics Corporation 功能描述: |
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