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參數(shù)資料
| 型號(hào)： | H5N2008P |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | H5N2008P |
H5N2008P
Rev.3.00 Nov.24.2004 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|yfs|
R
DS(on)
Min
200
—
—
3.0
35
—
Typ
—
—
—
—
58
0.020
Max
—
1
±0.1
4.5
—
0.023
Unit
V
μ
A
μ
A
V
S
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 200 V, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 48 A, V
DS
= 10 V
Note4
I
D
= 48 A, V
GS
= 10 V
Note4
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
4900
850
95
60
370
220
270
98
25
44
1.1
180
1.5
—
—
—
—
—
—
—
—
—
—
1.7
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
μ
C
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 48 A
V
GS
= 10 V
R
L
= 2.1
Rg = 10
V
DD
= 160 V
V
GS
= 10 V
I
D
= 96 A
I
F
= 96 A, V
GS
= 0
Note4
I
F
= 96 A, V
GS
= 0
diF/dt = 100 A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2008P-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P Magazine |
| H5N2301PF-E | 制造商:Renesas Electronics Corporation 功能描述: |
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| H5N2305PF | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET High Speed Power Switching |
| H5N2305PF-E | 制造商:Renesas Electronics Corporation 功能描述: |
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