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參數(shù)資料
| 型號(hào)： | H5N2008P |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | H5N2008P |
H5N2008P
Rev.3.00 Nov.24.2004 page 3 of 6
Main Characteristics
200
150
100
50
0
50
100
150
200
100
80
60
40
20
0
4
8
12
16
20
100
80
60
40
20
0
2
4
6
8
10
V
GS
= 5 V
6 V
Tc = 75
°
C
25
°
C
25
°
C
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
7 V
10 V
6
4
2
0
4
8
12
16
20
1
30
100
3
10
300
1000
0.02
0.01
0.005
0.1
0.05
0.002
0.001
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
Drain Current I
D
(A)
D
D
(
)
Static Drain to Source on State Resistance
vs. Drain Current
8
I
D
= 96 A
48 A
20 A
Pulse Test
V
GS
= 10 V, 15 V
Pulse Test
5.5 V
6.5 V
300
100
30
10
3
1
1
3
10
30
300
1000
0.3
0.01
0.1
0.03
1000
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
100
Ta = 25
°
C
100
μ
s
1 ms
10
μ
s
Operation in
this area is
limited by R
DS(on)
DC Operation
(Tc = 25
°
C)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2008P-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P Magazine |
| H5N2301PF-E | 制造商:Renesas Electronics Corporation 功能描述: |
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| H5N2305PF-E | 制造商:Renesas Electronics Corporation 功能描述: |
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