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參數(shù)資料
| 型號： | GSB1132 |
| 廠商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 268K |
| 代理商： | GSB1132 |
1/3
G
G S
S B
B 11113322
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A LL S
S II LL II C
C O
O N
N T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSB1132 is a epitaxial planar type PNP silicon transistor .
Features
Low VCE(sat). VCE(sat) = -0.2V(Typ.) (IC/IB = -500mA / -50 mA)
Package Dimensions
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
4.4
4.6
G
3.00 REF.
B
4.05
4.25
H
1.50 REF.
C
1.50
1.70
I
0.40
0.52
D
1.30
1.50
J
1.40
1.60
E
2.40
2.60
K
0.35
0.41
F
0.89
1.20
L
5 q TYP.
M
0.70 REF.
Absolute Maximum Ratings (Ta = 25 : ,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-32
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current(DC)
IC
-1
A
Collector Current(PULSE)
(note1)
IC
-2
A
Collector Power Dissipation
PD
0.5
W
Collector Power Dissipation (note2)
PD
2
W
Note 1:Single pulse, PW=100ms
Note 2: When mounted on a 40*40*0.7 mm ceramic board.
Electrical Characteristics (Ta = 25 : ,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
V
IC=-50uA
BVCEO
-32
-
V
IC=-1mA
BVEBO
-5
-
V
IE=-50uA
ICBO
-
-0.5
uA
VCB=-20V
IEBO
-
-0.5
uA
VEB=-4V
VCE(sat)
-
-0.2
-0.5
V
IC=-500mA, IB=-50mA(note)
hFE
82
-
390
VCE=-3V, IC=-100mA
fT
-
150
-
MHz
VCE=-5V, IE=-50mA, f=30MHz
Cob
-
20
30
pF
VCE=-10V, IE=0A, f=1MHz
Note: Measured using pulse current.
Classification Of hFE
Rank
P
Q
R
RANGE
82 - 180
120 - 270
180 - 390
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