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參數(shù)資料
| 型號： | GSB649A |
| 廠商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 556K |
| 代理商： | GSB649A |
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ISSUED DATE :2003/10/24
REVISED DATE :2004/11/29B
L
e 1
b
e
S E A T IN G
P L A N E
b 1
A
D
C
S 1
E
TO-92
G
G S
S B
B 664499A
A
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A LL P
P LL A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSB649A is designed for frequency power amplifier.
Features
*Low frequency power amplifier Complementary pair with GSD669A
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings(Ta = 25 : ,unless otherwise specified)
Parameter
Ratings
Unit
Collector to Base Voltage
VCBO
-180
V
Collector to Emitter Voltage
VCEO
-160
V
Emitter to Base Voltage
VEBO
-5
V
Collect Current(DC)
IC
-1.5
A
Collect Current*(Pulse)
ICP
-3
A
Junction Temperature
Tj
+150
Storage Temperature Range
TsTG
-55 ~ +150
Total Power Dissipation
PD
1
W
Total Power Dissipation (TC=25 :::: )
PD
20
W
Electrical Characteristics(Ta = 25 : ,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
V(BR)CBO
-180
-
V
IC=-1mA ,IE=0
V(BR)CEO
-160
-
V
IC=-10mA ,RBE=
V(BR)EBO
-5
-
V
IE=-1mA ,IC=0
ICBO
-
-10
uA
VCB=-160V , IE=0
*VCE(sat)
-
-1
V
lC=-600mA,IB=-50mA
*VBE(on)
-
-1.5
V
VCE=-5V,IC=-150mA
*hFE1
60
-
200
VCE=-5V,IC=-150mA
*hFE2
30
-
VCE=-5V,IC=-500mA
fT
-
140
-
MHz
VCE=-5V,IC=-150mA
Cob
-
27
-
pF
VCB=-10V ,IE=0,f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
Classification Of hFE1
Rank
B
C
Range
60-120
100-200
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