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參數(shù)資料
| 型號： | GSB772S |
| 廠商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 138K |
| 代理商： | GSB772S |
CORPORATION
1/2
ISSUED DATE :2004/09/13
REVISED DATE :2004/11/29B
GSB772S
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage at Ta=25 :
VCBO
-40
V
Collector to Emitter Voltage at Ta=25 :
VCEO
-30
V
Emitter to Base Voltage at Ta=25 :
VEBO
-5.0
V
Collector Current at Ta=25 :
IC
-3.0
A
Total Power Dissipation at Ta=25 :
PD
750
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
V
IC=-100uA
BVCEO
-30
-
V
IC=-10mA
BVEBO
-5
-
V
IE=-10uA
ICBO
-
-1
uA
VCB=-30V
IEBO
-
-1
uA
VEB=-3V
*VCE(sat)
-
-0.3
-0.5
V
IC=-2A, IB=-0.2A
*VBE(sat)
-
-1
-2
V
IC=-2A, IB=-0.2A
*hFE1
30
-
VCE=-2V, IC=-20mA
*hFE2
100
160
500
VCE=-2V, IC=-1A
fT
-
80
-
MHz
VCE=-20V, IC=-20mA, f=100MHz
Cob
-
55
-
Pf
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
Classification Of hFE2
Rank
Q
P
E
Range
100-200
160-320
250-500
L
e 1
b
e
S E A T IN G
P L A N E
b 1
A
D
C
S 1
E
TO-92
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