參數(shù)資料
型號(hào)： GS88218AB-133
廠(chǎng)商： GSI TECHNOLOGY
元件分類(lèi)： SRAM
英文描述： 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述： 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
封裝： PLASTIC, BGA-119
文件頁(yè)數(shù)： 3/38頁(yè)
文件大?。?/td> 1065K
代理商： GS88218AB-133
GS88218/36AB/D-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 11/2004
11/38
2001, GSI Technology
Synchronous Truth Table
Operation
Address Used
State
Diagram
Key5
E1
ADSP
ADSC
ADV
W3
DQ4
Deselect Cycle, Power Down
None
X
H
X
L
X
High-Z
Read Cycle, Begin Burst
External
R
L
X
Q
Read Cycle, Begin Burst
External
R
L
H
L
X
F
Q
Write Cycle, Begin Burst
External
W
L
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
H
F
Q
Write Cycle, Suspend Burst
Current
X
H
T
D
Write Cycle, Suspend Burst
Current
H
X
H
T
D
Notes:
1. X = Don’t Care, H = High, L = Low
2. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding
3. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
4. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
5. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
6. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
相關(guān)PDF資料
PDF描述
GS88218AB-133I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-150 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-150I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-166 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-166I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88218CB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 5.5NS/2.5NS 119FPBGA - Trays
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