參數(shù)資料
型號: GS88218AB-133
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數(shù): 2/38頁
文件大?。?/td> 1065K
代理商: GS88218AB-133
GS88218/36AB/D-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 11/2004
10/38
2001, GSI Technology
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC, and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “C” and “D” are only available on the x36 version.
Byte Write Truth Table
Function
GW
BW
BA
BB
BC
BD
Notes
Read
H
X
1
Read
H
L
HHHH
1
Write byte a
H
L
H
2, 3
Write byte b
H
L
H
L
H
2, 3
Write byte c
H
L
H
L
H
2, 3, 4
Write byte d
H
L
H
L
2, 3, 4
Write all bytes
H
LLLLL
2, 3, 4
Write all bytes
L
XXXX
X
相關(guān)PDF資料
PDF描述
GS88218AB-133I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-150 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-150I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-166 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-166I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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