參數(shù)資料
型號(hào)： GS881Z32CGD-150VT
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 256K X 32 ZBT SRAM, 7.5 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁(yè)數(shù)： 24/37頁(yè)
文件大小： 1239K
代理商： GS881Z32CGD-150VT
GS881Z18/32/36C(T/D)-xxxV
Rev: 1.00a 10/2009
30/37
2008, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
JTAG Port Recommended Operating Conditions and DC Characteristics (1.8/2.5 V Version)
Parameter
Symbol
Min.
Max.
Unit Notes
1.8 V Test Port Input Low Voltage
VILJ1
–0.3
0.3 * VDD1
V
1
2.5 V Test Port Input Low Voltage
VILJ2
–0.3
0.3 * VDD2
V
1
1.8 V Test Port Input High Voltage
VIHJ1
0.6 * VDD1
VDD1 +0.3
V
1
2.5 V Test Port Input High Voltage
VIHJ2
0.6 * VDD2
VDD2 +0.3
V
1
TMS, TCK and TDI Input Leakage Current
IINHJ
–300
1
uA
2
TMS, TCK and TDI Input Leakage Current
IINLJ
–1
100
uA
3
TDO Output Leakage Current
IOLJ
–1
1
uA
4
Test Port Output High Voltage
VOHJ
1.7
—
V
5, 6
Test Port Output Low Voltage
VOLJ
—
0.4
V
5, 7
Test Port Output CMOS High
VOHJC
VDDQ – 100 mV
—
V
5, 8
Test Port Output CMOS Low
VOLJC
—
100 mV
V
5, 9
Notes:
1. Input Under/overshoot voltage must be –2 V < Vi < VDDn +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC.
2. VILJ VIN VDDn
3. 0 V
VIN VILJn
4. Output Disable, VOUT = 0 to VDDn
5. The TDO output driver is served by the VDDQ supply.
6. IOHJ = –4 mA
7. IOLJ = + 4 mA
8. IOHJC = –100 uA
9. IOLJC = +100 uA
Notes:
1. Include scope and jig capacitance.
2. Test conditions as shown unless otherwise noted.
JTAG Port AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDDQ/2
Output reference level
VDDQ/2
DQ
VDDQ/2
50
30pF*
JTAG Port AC Test Load
* Distributed Test Jig Capacitance
相關(guān)PDF資料
PDF描述
GS881Z36BGT-200T 256K X 36 ZBT SRAM, 6.5 ns, PQFP100
GS881Z36BGT-250IT 256K X 36 ZBT SRAM, 5.5 ns, PQFP100
GS88218AB-133 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-133I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-150 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881Z36AT-133 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS881Z36AT-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS881Z36AT-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS881Z36AT-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS881Z36AT-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*