參數(shù)資料
型號: GS880Z32CGT-250
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 256K X 32 ZBT SRAM, 5.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 9/24頁
文件大小: 885K
代理商: GS880Z32CGT-250
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-333
-300
-250
-200
-150
Unit
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating
Current
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
(x32/
x36)
Pipeline
IDD
IDDQ
240
40
260
40
225
35
245
35
195
30
215
30
170
25
190
25
140
20
160
20
mA
Flow
Through
IDD
IDDQ
180
25
200
25
165
25
185
25
155
25
175
25
140
20
160
20
130
15
150
15
mA
(x18)
Pipeline
IDD
IDDQ
220
20
240
20
205
20
225
20
180
15
200
15
155
15
175
15
130
10
150
10
mA
Flow
Through
IDD
IDDQ
165
15
185
15
150
15
170
15
145
15
165
15
130
10
150
10
120
8
140
8
mA
Standby
Current
ZZ
≥ VDD – 0.2 V
Pipeline
ISB
25
45
25
45
25
45
25
45
25
45
mA
Flow
Through
ISB
25
45
25
45
25
45
25
45
25
45
mA
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
Pipeline
IDD
70
90
65
85
65
85
65
85
60
80
mA
Flow
Through
IDD
70
90
65
85
65
85
65
85
60
80
mA
GS880Z18/32/36CT-333/300/250/200/150
Rev: 1.02 12/2010
17/24
2010, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
相關(guān)PDF資料
PDF描述
GS88118AGT-150I 512K X 18 CACHE SRAM, 7.5 ns, PQFP100
GS88118AGT-133T 512K X 18 CACHE SRAM, 8.5 ns, PQFP100
GS88136BD-333 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-333I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
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