參數(shù)資料
型號(hào): GS880E18
廠商: GSI TECHNOLOGY
英文描述: 8Mb(512K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
中文描述: 8MB的(為512k × 18位)同步突發(fā)靜態(tài)存儲(chǔ)器(800萬(wàn)位(為512k × 18位)同步靜態(tài)隨機(jī)存儲(chǔ)器(帶2位脈沖地址計(jì)數(shù)器))
文件頁(yè)數(shù): 20/25頁(yè)
文件大?。?/td> 850K
代理商: GS880E18
Rev: 1.11 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
20/25
2000, Giga Semiconductor, Inc.
Preliminary
GS880E18/32/36T-11/11.5/100/80/66
Pipelined DCD Read-Write Cycle Timing
CK
ADSP
ADV
GW
BW
E
1
E
3
G
E
2
WR1
Q1
A
D1
A
Q2
A
Q2
B
Q2c
Q2
D
Single Read
Burst Read
tOE
tOHZ
tS
tS tH
tS
tS tH
tS
tH
tH
tS tH
tStH
tKH
E
1
masks ADSP
E
2
and E
3
only sampled with ADSP and ADSC
Deselected with E
3
DQ
A
–DQ
D
tKL
tKC
tS
tH
tH
Single Write
ADSP is blocked by E
1
inactive
tKQ
tS tH
Hi-Z
B
A
–B
D
ADSC
tS tH
ADSC initiated read
RD1
WR1
RD2
tS tH
A
0
–A
n
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