- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383052 > GS880E18 (GSI TECHNOLOGY) 8Mb（512K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) PDF資料下載
參數(shù)資料
| 型號： | GS880E18 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 8Mb（512K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| 中文描述： | 8MB的（為512k × 18位）同步突發(fā)靜態(tài)存儲器（800萬位（為512k × 18位）同步靜態(tài)隨機存儲器（帶2位脈沖地址計數(shù)器）） |
| 文件頁數(shù)： | 15/25頁 |
| 文件大?。?/td> | 850K |
| 代理商： | GS880E18 |
Rev: 1.11 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
15/25
2000, Giga Semiconductor, Inc.
Preliminary
GS880E18/32/36T-11/11.5/100/80/66
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-11
-11.5
-100
-80
-66
Unit
Min
10
—
1.5
Max
—
4.0
—
Min
10
—
1.5
Max
—
4.0
—
Min
10
—
1.5
Max
—
4.0
—
Min
12.5
—
1.5
Max
—
4.5
—
Min
15
—
1.5
Max
—
5
—
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKC
tKQ
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Flow-
Thru
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
15.0
—
3.0
—
11.0
—
15.0
—
3.0
—
11.5
—
15.0
—
3.0
—
12.0
—
15.0
—
3.0
—
14.0
—
20
—
3.0
—
18
—
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKH
tKL
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock HIGH Time
Clock LOW Time
1.7
2
—
—
1.7
2
—
—
2
—
—
2
—
—
2.3
2.5
—
—
ns
ns
2.2
2.2
Clock to Output in High-Z
tHZ
1
tOE
1.5
4.0
1.5
4.2
1.5
4.5
1.5
4.5
1.5
4.8
ns
G to Output Valid
—
4.0
—
4.2
—
4.5
—
4.5
—
4.8
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ
1
tS
tH
—
4.0
—
4.2
—
4.5
—
4.5
—
4.8
ns
Setup time
Hold time
1.5
0.5
—
—
2.0
0.5
—
—
2.0
0.5
—
—
2.0
0.5
—
—
2.0
0.5
—
—
ns
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
tZZR
1
—
1
—
1
—
1
—
1
—
ns
ZZ recovery
20
—
20
—
20
—
20
—
20
—
ns
相關PDF資料 |
PDF描述 |
|---|---|
| GS880E32 | 8Mb（256K x 32Bit) Synchronous Burst SRAM(8M位（256K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS880F18 | 8Mb（512K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS880F36 | 8Mb（256K x 36Bit) Synchronous Burst SRAM(8M位（256K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS880Z18 | 8Mb Pipelined and Flow Through Synchronous NBT SRAM(8M位流水線式和流通型同步NBT靜態(tài)RAM) |
| GS880Z36 | 8Mb Pipelined and Flow Through Synchronous NBT SRAM(8M位流水線式和流通型同步NBT靜態(tài)RAM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS880E18AT | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS880E18AT-133 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS880E18AT-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS880E18AT-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS880E18AT-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs |
發(fā)布緊急采購，3分鐘左右您將得到回復。