參數(shù)資料
型號(hào): GS88037BT-225I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 256K X 36 CACHE SRAM, 2.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 4/19頁
文件大小: 425K
代理商: GS88037BT-225I
Rev: 1.01 9/2003
12/19
2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS88037BT-333/300/275/250/225/200
AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDD
–1 uA
1 uA
ZZ Input Current
IIN1
VDD ≥ VIN ≥ VIH
0 V
≤ VIN ≤ VIH
–1 uA
1 uA
100 uA
Input Current
IIN2
VDD ≥ VIN ≥ VIL
0 V
≤ VIN ≤ VIL
–100 uA
–1 uA
1 uA
Output Leakage Current
IOL
Output Disable, VOUT = 0 to VDD
–1 uA
1 uA
Output High Voltage
VOH2
IOH = –8 mA, VDDQ = 2.375 V
1.7 V
Output High Voltage
VOH3
IOH = –8 mA, VDDQ = 3.135 V
2.4 V
Output Low Voltage
VOL
IOL = 8 mA
0.4 V
DQ
VDDQ/2
50
30pF*
Output Load 1
* Distributed Test Jig Capacitance
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