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參數(shù)資料
| 型號： | GS88037BT-225I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 256K X 36 CACHE SRAM, 2.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 3/19頁 |
| 文件大?。?/td> | 425K |
| 代理商： | GS88037BT-225I |
Rev: 1.01 9/2003
11/19
2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS88037BT-333/300/275/250/225/200
Note: These parameters are sample tested.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
025
70
°C2
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
°C2
Note:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
45
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
67
pF
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS88037BT-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 36 9Mb Sync Burst SRAM |
| GS88037BT-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 36 9Mb Sync Burst SRAM |
| GS88037BT-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 36 9Mb Sync Burst SRAM |
| GS88037BT-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 36 9Mb Sync Burst SRAM |
| GS88037BT-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 36 9Mb Sync Burst SRAM |
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