參數(shù)資料
型號: GS88037BT-225I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 256K X 36 CACHE SRAM, 2.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 19/19頁
文件大?。?/td> 425K
代理商: GS88037BT-225I
Rev: 1.01 9/2003
9/19
2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS88037BT-333/300/275/250/225/200
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 4.6
V
VDDQ
Voltage in VDDQ Pins
–0.5 to 4.6
V
VCK
Voltage on Clock Input Pin
–0.5 to 6
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD +0.5 (≤ 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
oC
TBIAS
Temperature Under Bias
–55 to 125
oC
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