參數(shù)資料
型號(hào)： GS8641E18F-200IT
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
封裝： 1 MM PITCH, BGA-165
文件頁(yè)數(shù)： 31/31頁(yè)
文件大?。?/td> 769K
代理商： GS8641E18F-200IT
GS8641E18/32/36F-300/250/200/167
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 3/2005
9/31
2004, GSI Technology
Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key5
E1
E2
ADSP ADSC
ADV
W3
DQ4
Deselect Cycle, Power Down
None
X
H
X
L
X
High-Z
Deselect Cycle, Power Down
None
X
L
F
L
X
High-Z
Deselect Cycle, Power Down
None
X
L
F
H
L
X
High-Z
Read Cycle, Begin Burst
External
R
L
T
L
X
Q
Read Cycle, Begin Burst
External
R
L
T
H
L
X
F
Q
Write Cycle, Begin Burst
External
W
L
T
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
H
F
Q
Write Cycle, Suspend Burst
Current
X
H
T
D
Write Cycle, Suspend Burst
Current
H
X
H
T
D
Notes:
1. X = Don’t Care, H = High, L = Low
2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1
3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
相關(guān)PDF資料
PDF描述
GS8641Z18GF-167T 4M X 18 ZBT SRAM, 8 ns, PBGA165
GS8642V18E-250 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
GS8642ZV36GB-167IT 2M X 36 ZBT SRAM, 8 ns, PBGA119
GS864418GE-225IV 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8641E18GF-167 制造商:GSI Technology 功能描述:4MBX18, DCD PIPELINE/FLOW THROUGH,PB-FREE,165 BGA,167MHZ,8NS - Trays
GS8641E18GF-250 制造商:GSI Technology 功能描述:4MBX18,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,250MHZ,6.5NS - Trays
GS8641E18GF-300 制造商:GSI Technology 功能描述:4MBX18,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,300MHZ,5.5NS - Trays
GS8641E32GF-167 制造商:GSI Technology 功能描述:2MBX32,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,300MHZ,5.5NS - Trays
GS8641E32GF-250 制造商:GSI Technology 功能描述:2MBX32,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,250MHZ,6.5NS - Trays
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