參數(shù)資料
型號(hào): GS8641E18F-200IT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
封裝: 1 MM PITCH, BGA-165
文件頁(yè)數(shù): 3/31頁(yè)
文件大?。?/td> 769K
代理商: GS8641E18F-200IT
GS8641E18/32/36F-300/250/200/167
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 3/2005
11/31
2004, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
W
R
X
CR
R
CW
CR
W
CW
W
CW
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
相關(guān)PDF資料
PDF描述
GS8641Z18GF-167T 4M X 18 ZBT SRAM, 8 ns, PBGA165
GS8642V18E-250 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
GS8642ZV36GB-167IT 2M X 36 ZBT SRAM, 8 ns, PBGA119
GS864418GE-225IV 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
GS8644V18GE-150 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8641E18GF-167 制造商:GSI Technology 功能描述:4MBX18, DCD PIPELINE/FLOW THROUGH,PB-FREE,165 BGA,167MHZ,8NS - Trays
GS8641E18GF-250 制造商:GSI Technology 功能描述:4MBX18,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,250MHZ,6.5NS - Trays
GS8641E18GF-300 制造商:GSI Technology 功能描述:4MBX18,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,300MHZ,5.5NS - Trays
GS8641E32GF-167 制造商:GSI Technology 功能描述:2MBX32,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,300MHZ,5.5NS - Trays
GS8641E32GF-250 制造商:GSI Technology 功能描述:2MBX32,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,250MHZ,6.5NS - Trays