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參數(shù)資料
| 型號(hào)： | GS84118AB-166IT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 256K X 18 CACHE TAG SRAM, 8.5 ns, PBGA119 |
| 封裝： | FBGA-119 |
| 文件頁數(shù)： | 20/20頁 |
| 文件大?。?/td> | 404K |
| 代理商： | GS84118AB-166IT |
GS84118AT/B-166/150/130/100
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 4/2005
9/20
2001, GSI Technology
Notes:
1. Junction temperature is a function of SRAM power dissapation, package thermal resistance, mounting board temperature, ambient.
Temperature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87.
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
Package Thermal Characteristics
Rating
Layer Board
Symbol
TQFP max PBGA max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
32
28
°C/W
1,2
Junction to Ambient (at 200 lfm)
four
RΘJA
20
18
°C/W
1,2
Junction to Case (TOP)
—
RΘJC
74
°C/W
3
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ.
4. Device is deselected as defined by the Truth Table.
AC Test Conditions
(VDD = 3.135 V–3.6 V, Ta = 0–70
°C)
Parameter
Conditions
Input high level
VIH = 2.3 V
Input low level
VIL = 0.2 V
Input slew rate
TR = 1 V/ns
Input reference level
1.25 V
Output reference level
1.25 V
Output load
Fig. 1& 2
DQ
VT = 1.25 V
50W 30pF1
DQ
2.5 V
FIG. 1
Output load 1
Output load 2
FIG. 2
225W
5pF1
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