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參數(shù)資料
| 型號(hào)： | GS84018AB-190 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 256K X 18 CACHE SRAM, 7.5 ns, PBGA119 |
| 封裝： | FPBGA-119 |
| 文件頁數(shù)： | 9/31頁 |
| 文件大小： | 1248K |
| 代理商： | GS84018AB-190 |
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Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
—
0.8
V
1
VDDQ3 I/O Input High Voltage
VIHQ3
2.0
—
VDDQ + 0.3
V
1,3
VDDQ3 I/O Input Low Voltage
VILQ3
–0.3
—
0.8
V
1,3
VDDQ2 I/O Input High Voltage
VIHQ2
0.6*VDD
—
VDDQ + 0.3
V
1,3
VDDQ2 I/O Input Low Voltage
VILQ2
–0.3
—
0.3*VDD
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
GS84018/32/36AT/B-190/180/166/150/100
Rev: 1.18 3/2007
17/31
1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
2
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
°C
2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
50% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
50% tKC
VDD + 2.0 V
50%
VDD
VIL
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| GS84018AGB-100 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 3.3V 4.5MBIT 256KX18 12NS/4.5NS 119FBGA - Trays |
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