參數(shù)資料
型號: GS832236B-225
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 36 CACHE SRAM, 7 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FBGA-119
文件頁數(shù): 4/46頁
文件大?。?/td> 1592K
代理商: GS832236B-225
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07a 12/2007
12/46
2001, GSI Technology
Note:
There are pull-up devices on the ZQ, SCD, and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
BPR 1999.05.18
Mode Pin Functions
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
Linear Burst
H
Interleaved Burst
Output Register Control
FT
L
Flow Through
H or NC
Pipeline
Power Down Control
ZZ
L or NC
Active
H
Standby, IDD = ISB
Single/Dual Cycle Deselect Control
SCD
L
Dual Cycle Deselect
H or NC
Single Cycle Deselect
FLXDrive Output Impedance Control
ZQ
L
High Drive (Low Impedance)
H or NC
Low Drive (High Impedance)
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
相關PDF資料
PDF描述
GS832236E-225IV 1M X 36 CACHE SRAM, 7 ns, PBGA165
GS8322Z18E-225VT 2M X 18 ZBT SRAM, 7 ns, PBGA165
GS8322ZV72GC-150IT 512K X 72 ZBT SRAM, 8.5 ns, PBGA209
GS8322ZV36GB-200T 1M X 36 ZBT SRAM, 7.5 ns, PBGA119
GS8322ZV36GE-225IT 1M X 36 ZBT SRAM, 7 ns, PBGA165
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