參數(shù)資料
型號: GS820H32
廠商: GSI TECHNOLOGY
英文描述: 2Mb(64K x 32Bit) Synchronous Burst SRAM(2M位(64K x 32位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
中文描述: 2MB的(64K的x 32位)同步突發(fā)靜態(tài)存儲器(200萬位(64K的× 32位)同步靜態(tài)隨機存儲器(帶2位脈沖地址計數(shù)器))
文件頁數(shù): 23/23頁
文件大?。?/td> 342K
代理商: GS820H32
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
23/23
1999, Giga Semconductor, Inc.
D
GS820H32T/Q-150/138/133/117/100/66
Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Revisions
GS
GS820H32
18/36
Rev 1.00
9/1999A
Format
This was the first release of 2 Meg Burst Datasheets in the new format.
They included information for the Fine Pitch BGA package.
GS
GS820H32
18/36
Rev 1.00
9/1999A; 1.01 11/1999B
Content
Took out the Fine Pitch BGA information.
GS
GS820H32
18/36
Rev 1.01
11/1999B; 1.02 1/2000C
Content
Ordering information. Changed 128K x 32 to 64K x 32; Typo
Ordering information. Changed “0” to go before “H” or “E” in part number.
Ordering information. Changed - 117 to -4, -100 to -5. and -66 to -6.
GS820H32
18/36
1.02 1/
2000C;820H32
18/36
1.03 2/
2000D
Format/Content
New GSI Logo
Switched TKQ with TCycle in Flow Through part of table on page 1.
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