參數(shù)資料
型號(hào)： GS820H32
廠商： GSI TECHNOLOGY
英文描述： 2Mb（64K x 32Bit) Synchronous Burst SRAM(2M位（64K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
中文描述： 2MB的（64K的x 32位）同步突發(fā)靜態(tài)存儲(chǔ)器（200萬(wàn)位（64K的× 32位）同步靜態(tài)隨機(jī)存儲(chǔ)器（帶2位脈沖地址計(jì)數(shù)器））
文件頁(yè)數(shù)： 10/23頁(yè)
文件大?。?/td> 342K
代理商： GS820H32
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
10/23
1999, Giga Semconductor, Inc.
D
GS820H32T/Q-150/138/133/117/100/66
Capacitance
(T
A
=25
o
C, f=1MH
Z
, V
DD
=3.3V)
Note: This parameter is sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAMpower dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87.
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
4. For x18 configuration, consult factory.
2.
3.
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
C
I
C
IN
C
OUT
V
DD
=3.3V
V
IN
=0V
V
OUT
=0V
3
4
pF
Input Capacitance
4
5
pF
Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
TQFP Max
QFP Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
R
Θ
JA
R
Θ
JA
R
Θ
JC
40
TBD
°
C/W
°
C/W
°
C/W
1,2,4
Junction to Ambient (at 200 lfm)
four
24
TBD
1,2,4
Junction to Case (TOP)
9
TBD
3,4
20% tKC
V
SS
-2.0V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+-2.0V
50%
V
DD
V
IL
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